Effects of Pocket Doping Conncentration on 1T DRAM based on Pillar Type Tunneling Field-effect Transistor with Surrounding Gate Structure
기간
2016
참가자
Hyungjin Kim
대회명
Korean Conference on Semiconductors
Effects of Pocket Doping Conncentration on 1T DRAM based on Pillar Type Tunneling Field-effect Transistor with Surrounding Gate Structure