Home MOS Memory Using Si Nanocrystal Formed by Wet Etching of Poly-Silicon Along Grain Boundaries
기간
2000
참가자
Seong-jong Yoo
대회명
2000 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
MOS Memory Using Si Nanocrystal Formed by Wet Etching of Poly-Silicon Along Grain Boundaries