The Influence of Deuterium Annealing on the Evolution of Interface Trap Capture Cross Sections in n-MOSFET under Channel-Hot-Electron and Fowler-Nordheim Stresses
기간
2004
참가자
Hyuck In Kwon
대회명
Korean Conference on Semiconductors
The Influence of Deuterium Annealing on the Evolution of Interface Trap Capture Cross Sections in n-MOSFET under Channel-Hot-Electron and Fowler-Nordheim Stresses