Intro

Jong-Ho Lee, Professor, IEEE Fellow

Prof. Lee received the B.S. degree from Kyungpook National University, Daegu, Korea, in 1987 and the M.S. and Ph.D. degrees from Seoul National University, Seoul, in 1989 and 1993, respectively, all in electronic engineering.

In 1993, he worked on advanced BiCMOS process development at ISRC, Seoul National University as an Engineer. In 1994, he was with the School of Electrical Engineering, Wonkwang University, Iksan, Chonpuk, Korea. In 2002, he moved to Kyungpook National University, Daegu Korea, as a Professor of the School of Electrical Engineering and Computer Science. Since September 2009, he has been a Professor in the School of Electrical and Computer Engineering, Seoul National University, Seoul Korea. From 1994 to 1998, he was with ETRI as an invited member of technical staff, where he worked on deep submicron MOS devices, device isolation. From August 1998 to July 1999, he was with Massachusetts Institute of Technology, Cambridge, as a postdoctoral fellow, where he was engaged in the research on sub-100 nm double-gate CMOS devices.

Prof. Lee is a Lifetime Member of the Institute of Electronics Engineers of Korea (IEEK) and IEEE Fellow. He has been served as a subcommittee member of IEDM, ITRS ERD member, a general chair of IPFA2011, and IEEE EDS Korea chapter chair. He received many awards for excellent research papers and research excellence. He invented bulk FinFET, Saddle FinFET (or bCAT) for DRAM cell transistors, and NAND flash cell string with virtual source/drain. These three inventions are key technologies which have been applying for mass production in industry.