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High performance one-transistor DRAM cell device and manufacturing method thereof
Author
admgenie
Date
2024-03-25
Views
431
Provided are a high-performance one-transistor floating-body DRAM cell device and a manufacturing method thereof. The one-transistor floating-body DRAM cell device includes: a semiconductor substrate; a gate stack which is formed on the semiconductor substrate; a control electrode which is formed on the semiconductor substrate and surrounded by the gate stack; a floating body which is formed on the control electrode that is surrounded by the gate stack; source/drain which are formed at left and right sides of the floating body; an insulating layer which insulates the source/drain from the semiconductor substrate and the control electrode; a gate insulating layer which is formed on the floating body and the source/drain; and a gate electrode which is formed on the gate insulating layer. In the cell device having a double-gate structure, charges can be stored in a non-volatile manner by the control electrodes, so that it is possible to improve a degree of integration of devices, a uniformity of characteristic, and a sensing margin.
등록번호/일자 08143656 (2012.03.27)
등록번호/일자 08143656 (2012.03.27)