International
Registration
Diode-based flash memory device cell string and fabricating method therefor
작성자
admgenie
작성일
2024-03-25
조회
410
Provided is an ultra highly-integrated flash memory cell device. The cell device includes a semiconductor substrate, a first doping semiconductor area formed on the semiconductor substrate, a second doping semiconductor area formed on the first doping semiconductor area, and a tunneling insulating layer, a charge storage node, a control insulating layer, and a control electrode which are sequentially formed on the second doping semiconductor area. The first and second doping semiconductor areas are doped with impurities of the different semiconductor types According to the present invention, it is possible to greatly improve miniaturization characteristics and performance of the cell devices in conventional NOR or NAND flash memories. Unlike conventional transistor type cell devices, the cell device according to the present invention does not have a channel and a source/drain. Therefore, in comparison with the conventional memories, the fabricating process can be simplified, and the problem such as cross-talk or read disturb can be greatly reduced.
등록번호/일자 08779501 (2014.07.15)
등록번호/일자 08779501 (2014.07.15)