International
Registration
PILLAR-TYPE FIELD EFFECT TRANSISTOR HAVING LOW LEAKAGE CURRENT
작성자
admgenie
작성일
2024-03-25
조회
434
A pillar-type field effect transistor having low leakage current is provided. The pillar-type field effect transistor includes: a semiconductor body, source and drain formed in a semiconductor pillar; a gate insulating layer formed on a surface of the semiconductor body; a gate electrode formed on a surface of the gate insulating layer. The gate electrode includes a first gate electrode and a second gate electrode being electrically connected with the first gate electrode. The first gate electrode has a work function higher than that of the second gate electrode. Accordingly, the gate induced drain leakage (GIDL) can be reduced, so that an off-state leakage current can be greatly reduced.
등록번호/일자 09564200 (2017.02.07)
등록번호/일자 09564200 (2017.02.07)