International
Registration
Neuromorphic devices and circuits
Author
admgenie
Date
2024-03-25
Views
365
Provided are a neuromorphic device and a neuromorphic circuit using the neuromorphic device. The neuromorphic device is configured to include a first semiconductor region formed on a substrate in a wall shape or a dumbbell shape; first, second, third, and fourth doped regions sequentially formed in the first semiconductor region; first and second gate insulating film stacks disposed on the respective side surfaces of the second doped region; first and second gate electrodes respectively disposed on the respective side surfaces of the second doped region; the first and second gate electrodes disposed on the respective side surface of the second doped region, the first and second gate electrodes being electrically insulated from the second doped, region by the first and second gate insulating film stacks; and first and second electrodes electrically connected to the first and fourth doped regions, respectively.
등록번호/일자 10868160 (2020.12.15)
등록번호/일자 10868160 (2020.12.15)