A continuous current model of ultra-thin cylindrical surrounding-gate inversion-mode Si nanowire nMOSFETs considering a wide range of body doping concentration
저자
Xiaoshi Jin et al.
저널 정보
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
출간연도
2012
A continuous current model of ultra-thin cylindrical surrounding-gate inversion-mode Si nanowire nMOSFETs considering a wide range of body doping concentration