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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

Home A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

저자

Young Jun Yoon et al.

저널 정보

Applied Physics Letters

출간연도

2019

링크

https://doi.org/10.1063/1.5090934

A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance