A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization
저자
Jeong, Chan-Yong et al.
저널 정보
Semiconductor Science and Technology
출간연도
2014
A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization