Accurate extraction of delta I/I due to random telegraph noise in gate edge current of high-k -type metal-oxide-semiconductor field-effect transistors under accumulation mode
저자
Ju-Wan Lee et al.
저널 정보
Applied Physics Letters
출간연도
2011
Accurate extraction of delta I/I due to random telegraph noise in gate edge current of high-k -type metal-oxide-semiconductor field-effect transistors under accumulation mode