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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

Home Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

저자

Daeun Lee et al.

저널 정보

Journal of Vacuum Science & Technology B

출간연도

2015

링크

https://doi.org/10.1116/1.4903527

Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses