바로가기 메뉴: 본문 바로가기; 푸터 바로가기

서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

사이트맵

TOP

Home Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

Home Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

저자

Byoungchan Oh et al.

저널 정보

IEEE Transactions on Electron Devices

출간연도

2011

링크

https://doi.org/10.1109/TED.2011.2126046

Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors