Current Model of Fully Depleted Nanoscale Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel in All Operation Regions
저자
Byung-Kil Choi et al.
저널 정보
Japanese Journal of Applied Physics
출간연도
2009
Current Model of Fully Depleted Nanoscale Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel in All Operation Regions