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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Direct observation of lateral hole migration in the charge trap layer of an inhomogeneous flash memory device

Home Direct observation of lateral hole migration in the charge trap layer of an inhomogeneous flash memory device

Direct observation of lateral hole migration in the charge trap layer of an inhomogeneous flash memory device

저자

Joon Hwang et al.

저널 정보

Applied Physics Reviews

출간연도

2026

링크

https://doi.org/10.1063/5.0314307

Direct observation of lateral hole migration in the charge trap layer of an inhomogeneous flash memory device