Home Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory
저자
Munhyeon Kim et al.
저널 정보
IEEE Electron Device Letters
출간연도
2021
링크
https://doi.org/10.1109/LED.2021.3116797
Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory
