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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Effect of temperature and humidity on NO 2 and NH 3 gas sensitivity of bottom-gate graphene FETs prepared by ICP-CVD

Home Effect of temperature and humidity on NO 2 and NH 3 gas sensitivity of bottom-gate graphene FETs prepared by ICP-CVD

Effect of temperature and humidity on NO 2 and NH 3 gas sensitivity of bottom-gate graphene FETs prepared by ICP-CVD

저자

Chang-Hee Kim et al.

저널 정보

IEEE Electron Device Letters

출간연도

2012

링크

https://doi.org/10.1109/LED.2012.2193867

Effect of temperature and humidity on NO 2 and NH 3 gas sensitivity of bottom-gate graphene FETs prepared by ICP-CVD