Effects of Recess Channel (RC) Depth in Super Self-Aligned RC nMOSFET’s for sub-100 nm Device Technology
저자
Doo Yeon Chung et al.
저널 정보
Journal of the Korean Physical Society
출간연도
1998
링크
Effects of Recess Channel (RC) Depth in Super Self-Aligned RC nMOSFET’s for sub-100 nm Device Technology