바로가기 메뉴: 본문 바로가기; 푸터 바로가기

서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

사이트맵

TOP

Home Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

Home Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

저자

Jung-Kyu Lee et al.

저널 정보

IEEE Electron Device Letters

출간연도

2013

링크

https://doi.org/10.1109/LED.2012.2235401

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide