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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Gate-First Negative Capacitance Field-Effect Transistor With Self-Aligned Nickel-Silicide Source and Drain

Home Gate-First Negative Capacitance Field-Effect Transistor With Self-Aligned Nickel-Silicide Source and Drain

Gate-First Negative Capacitance Field-Effect Transistor With Self-Aligned Nickel-Silicide Source and Drain

저자

Sihyun Kim et al.

저널 정보

IEEE Transactions on Electron Devices

출간연도

2021

링크

https://doi.org/10.1109/TED.2021.3097292

Gate-First Negative Capacitance Field-Effect Transistor With Self-Aligned Nickel-Silicide Source and Drain