High Performance p-type SnO thin-film Transistor with SiOx Gate Insulator Deposited by Low-Temperature PECVD Method
저자
Myeonghun U et al.
저널 정보
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
출간연도
2014
High Performance p-type SnO thin-film Transistor with SiOx Gate Insulator Deposited by Low-Temperature PECVD Method