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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells

Home Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells

Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells

저자

Donghua Li et al.

저널 정보

Nanoscience and Nanotechnology Letters

출간연도

2016

링크

https://doi.org/10.1166/nnl.2016.2036

Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells