Interface percolation and random trap generation in ferroelectric memory: A two-step degradation mechanism explored through low-frequency noise spectroscopy
저자
Ryun-Han Koo et al.
저널 정보
Chaos, Solitons & Fractals
출간연도
2025
Interface percolation and random trap generation in ferroelectric memory: A two-step degradation mechanism explored through low-frequency noise spectroscopy