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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs

Home Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs

Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs

저자

Ju-Wan Lee et al.

저널 정보

IEEE Transactions on Electron Devices

출간연도

2010

링크

https://doi.org/10.1109/TED.2010.2041871

Investigation of Random Telegraph Noise in Gate-Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs