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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

Home Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

저자

Sihyun Kim et al.

저널 정보

Solid-State Electronics

출간연도

2018

링크

https://doi.org/10.1016/j.sse.2017.10.013

Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)