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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory

Home Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory

Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory

저자

Wandong Kim et al.

저널 정보

Japanese Journal of Applied Physics

출간연도

2011

링크

https://doi.org/10.1143/JJAP.50.04DD08

Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory