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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method

Home Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method

Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method

저자

Chan-Yong Jeong

저널 정보

IEEE Electron Device Letters

출간연도

2015

링크

https://doi.org/10.1109/LED.2015.2489223

Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method