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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Method to Eliminate Gate and Drain Bias Stresses in Transfer Curves of WSe2 Field Effect Transistors with Single Channel Pulsed I–V Measurement

Home Method to Eliminate Gate and Drain Bias Stresses in Transfer Curves of WSe2 Field Effect Transistors with Single Channel Pulsed I–V Measurement

Method to Eliminate Gate and Drain Bias Stresses in Transfer Curves of WSe2 Field Effect Transistors with Single Channel Pulsed I–V Measurement

저자

Jun-Mo Park et al.

저널 정보

Journal of Nanoscience and Nanotechnology

출간연도

2017

링크

https://doi.org/10.1166/jnn.2017.14040

Method to Eliminate Gate and Drain Bias Stresses in Transfer Curves of WSe2 Field Effect Transistors with Single Channel Pulsed I–V Measurement