Home Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors
저자
Ju-Wan Lee et al.
저널 정보
Applied Physics Letters
출간연도
2012
링크
https://doi.org/10.1063/1.3678023
Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors