Modelling of the nanoscale channel length effect on the subthreshold characteristics of junctionless field-effect transistors with a symmetric double-gate structure
저자
Xiaoshi Jin et al.
저널 정보
Journal of Physics D: Applied Physics
출간연도
2012
Modelling of the nanoscale channel length effect on the subthreshold characteristics of junctionless field-effect transistors with a symmetric double-gate structure