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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si3⁢N4 Charge Trap Layer of Flash Memory Devices

Home Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si3⁢N4 Charge Trap Layer of Flash Memory Devices

Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si3⁢N4 Charge Trap Layer of Flash Memory Devices

저자

Joon Hwang et al.

저널 정보

Physical Review Letters

출간연도

2025

링크

https://doi.org/10.1103/lj4r-dcb7

Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si3⁢N4 Charge Trap Layer of Flash Memory Devices