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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home NO2 gas response improvement method by adopting oxygen vacancy controlled In2O3 double sensing layers

Home NO2 gas response improvement method by adopting oxygen vacancy controlled In2O3 double sensing layers

NO2 gas response improvement method by adopting oxygen vacancy controlled In2O3 double sensing layers

저자

Kangwook Choi et al.

저널 정보

Solid-State Electronics

출간연도

2024

링크

https://doi.org/10.1016/j.sse.2024.108926

NO2 gas response improvement method by adopting oxygen vacancy controlled In2O3 double sensing layers