Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory
저자
Dae Woong Kwon et al.
저널 정보
IEEE Journal of the Electron Devices Society
출간연도
2018
Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory