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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Partially depleted SOI NMOSFET’s with self-aligned polysilicon gate formed on the recessed channel region

Home Partially depleted SOI NMOSFET’s with self-aligned polysilicon gate formed on the recessed channel region

Partially depleted SOI NMOSFET’s with self-aligned polysilicon gate formed on the recessed channel region

저자

Jong-Ho Lee et al.

저널 정보

IEEE Electron Device Letters

출간연도

1997

링크

https://doi.org/10.1109/55.568756

Partially depleted SOI NMOSFET’s with self-aligned polysilicon gate formed on the recessed channel region