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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices

Home Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices

Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices

저자

Ryun-Han Koo et al.

저널 정보

Nano Convergence

출간연도

2025

링크

https://doi.org/10.1186/s40580-025-00505-1

Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices