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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

Home Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

저자

Chan-Yong Jeong et al.

저널 정보

Journal of Vacuum Science & Technology B

출간연도

2015

링크

https://doi.org/10.1116/1.4919234

Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors