바로가기 메뉴: 본문 바로가기; 푸터 바로가기

서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

사이트맵

TOP

Home Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs

Home Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs

Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs

저자

Wonjun Shin et al.

저널 정보

IEEE Electron Device Letters

출간연도

2024

링크

https://doi.org/10.1109/LED.2024.3425155

Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs