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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

Home The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

저자

Sung-Min Joe et al.

저널 정보

IEEE Transactions on Electron Devices

출간연도

2012

링크

https://doi.org/10.1109/TED.2012.2219866

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings