Home The optimal design of 15 nm gate-length junctionless SOI FinFETs for reducing leakage current
저자
Xi Liu et al.
저널 정보
Semiconductor Science and Technology
출간연도
2013
링크
https://doi.org/10.1088/0268-1242/28/10/105013
The optimal design of 15 nm gate-length junctionless SOI FinFETs for reducing leakage current