Home Toward Optimized In-Memory Reinforcement Learning: Leveraging 1/f Noise of Synaptic Ferroelectric Field-Effect-Transistors for Efficient Exploration
저자
Jangsaeng Kim et al.
저널 정보
Advanced Intelligent Systems
출간연도
2024
링크
https://doi.org/10.1002/aisy.202300763
Toward Optimized In-Memory Reinforcement Learning: Leveraging 1/f Noise of Synaptic Ferroelectric Field-Effect-Transistors for Efficient Exploration