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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Vertically-Stacked Si0.2Ge0.8 Nanosheet Tunnel FET With 70 mV/Dec Average Subthreshold Swing

Home Vertically-Stacked Si0.2Ge0.8 Nanosheet Tunnel FET With 70 mV/Dec Average Subthreshold Swing

Vertically-Stacked Si0.2Ge0.8 Nanosheet Tunnel FET With 70 mV/Dec Average Subthreshold Swing

저자

Ryoongbin Lee et al.

저널 정보

IEEE Electron Device Letters

출간연도

2021

링크

https://doi.org/10.1109/LED.2021.3079246

Vertically-Stacked Si0.2Ge0.8 Nanosheet Tunnel FET With 70 mV/Dec Average Subthreshold Swing