Based on MOSFET having a horizontal floating gate
CMOS compatible, detecting various gases
Higher sensitivity than previous FET gas sensor
Measurement Condition Temperature : 180°C Gas concentrations : NO2 (1 ~ 50 ppm)
Gas Sensing Characteristics Threshold Voltage Shift (right direction) Drain Current Increase (PMOSFET) Response Time : 45 s Recovery Time : 300 s