International
Registration
High-density flash memory cell stack, cell stack string, and fabrication method thereof
작성자
admgenie
작성일
2024-03-25
조회
452
A flash memory cell string and a method of fabricating the same are provided. The flash memory cell string includes a plurality of cell devices and switching devices connected to ends of the cell devices. Each of the cell devices includes a semiconductor substrate, a tunneling insulating layer, a charge storage node, a control insulating layer, and a control electrode which are sequentially laminated on the semiconductor substrate. In each cell device, a source/drain region is not formed. The switching device does not include a source or drain region in a side connected to the cell devices. The switching device includes a source or drain region in the other side that is not connected to the cell devices. The source or drain region does or does not overlap the control electrode. Accordingly, it is possible to improve a miniaturization property and performance of NAND flash memory cell devices. If necessary, it is possible to electrically connect cells or cell strings by inducing an inversion layer through a fringing electric field from a control electrode.
등록번호/일자 08471295 (2013.06.25)
등록번호/일자 08471295 (2013.06.25)