International
Registration
HIGH DENSITY FLASH MEMORY CELL STRING, CELL ELEMENT, AND MANUFACTURING METHOD THEREOF
Author
admgenie
Date
2024-03-25
Views
403
This invention is related to a flash memory cell string and a method of manufacturing the same. The flash memory cell string comprises: a plurality of cell elements; and switching elements connected to ends of the cell elements. The cell elements comprise: a semiconductor substrate; a penetration insulator film, a charge storage node, a control insulating layer, and a control electrode which are sequentially laminated on the semiconductor substrate. In each cell element, a source/drain region is not formed. The switching elements do not comprises a source or drain region in a side connected to the cell elements. The switching elements comprise the source or drain region in the other side that is not connected to the cell elements. The source or drain region does or does not overlap the control electrode.
등록번호/일자 05592448 (2014.08.08)
등록번호/일자 05592448 (2014.08.08)