International
Registration
Memory cell string based on gated-diode cell and memory array using the same
작성자
admgenie
작성일
2024-03-25
조회
436
The present invention provides a nonvolatile memory cell string and a memory array using the same. According to the present invention, a wall type semiconductor separated into twin fins and a memory cell string formed with memory cells having a gated diode structure along each fin are enabled to increase the degree of integration and basically prevent the interferences between adjacent cells. And a first semiconductor layer and a depletion region of a PN junction wrapped up by a gate electrode are enabled to remove GSL and CSL by GIDL memory operation and significantly increase the degree of integration for applying to a neuromorphic technology.
등록번호/일자 08964475 (2015.02.24)
등록번호/일자 08964475 (2015.02.24)