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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study

A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study

저자

Jaehoon Park et al.

저널 정보

IEEE Electron Device Letters

출간연도

2017

링크

https://doi.org/10.1109/LED.2016.2631619

A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study