Home A Gate-Induced Drain-Leakage Current Model for Fully Depleted Double-Gate MOSFETs
저자
Xiaoshi Jin et al.
저널 정보
IEEE Transactions on Electron Devices
출간연도
2008
링크
https://doi.org/10.1109/TED.2008.2003229
A Gate-Induced Drain-Leakage Current Model for Fully Depleted Double-Gate MOSFETs
