Band-to-Band Hot-hole Erase Characteristics of 2-Bit/cell NOR-type Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell with Spacer-type Storage Node on Recessed Channel Structure
저자
Kyoung-Rok Han et al.
저널 정보
Japanese Journal of Applied Physics
출간연도
2007
Band-to-Band Hot-hole Erase Characteristics of 2-Bit/cell NOR-type Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell with Spacer-type Storage Node on Recessed Channel Structure