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서울대학교 이종호 교수님 연구실Semiconductor Materials and Devices Laboratory

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Home Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions

Home Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions

Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions

저자

Sang-Yun Kim et al.

저널 정보

Japanese Journal of Applied Physics

출간연도

2007

링크

https://doi.org/10.1143/JJAP.46.3347

Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions